sot-23 plastic-encapsulate transistors transistor (npn) features z z collector current: i c =0.5a marking: j3y maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 40 v v ceo collector-emitter voltage 25 v v ebo emitter-base voltage 5 v i c collector current -continuous 0.5 a p c collector dissipation 0.3 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a=25 unless otherwise specified) parameter symbol test conditions min t yp max unit collector-base breakdown voltage v (br)cbo i c = 100 a, i e =0 40 v collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 25 v emitter-base breakdown voltage v (br)ebo i e =100 a, i c =0 5 v collector cut-off current i cbo v cb =40 v , i e =0 0.1 a collector cut-off current i ceo v cb =20v , i e =0 0.1 a emitter cut-off current i ebo v eb = 5v , i c =0 0.1 a h fe(1) v ce =1v, i c = 50ma 120 350 dc current gain h fe(2) v ce =1v, i c = 500ma 50 collector-emitter saturation voltage v ce (sat) i =500 ma, i b = 50ma 0.6 v base-emitter saturation voltage v be (sat) i c =500 ma, i b = 50ma 1.2 v transition frequency f t v ce =6v, i c = 20ma f= 30mhz 150 mhz classification of h fe(1) rank l h range 120-200 200-350 so t -23 1. base 2. emitter 3. collector 2012- 0 willas electronic corp. 8050SLT1
1 10 100 10 100 1000 1 10 100 10 100 0.1 1 10 1 100 10 0 25 50 75 100 125 150 0 100 200 300 400 0.2 0.4 0.6 0.8 1.0 0.1 1 10 100 1 10 100 0.0 0.4 0.8 1.2 0481 21 62 0 0 20 40 60 80 100 f t i c h fe common emitter v ce =1v 3 30 500 t a =100 t a =25 dc current gain h fe collector current i c (ma) i c 30 300 30 3 collector-emitter saturation voltage v cesat (mv) collector current i c (ma) =10 t a =25 t a =100 i c v cesat 500 500 100 30 10 3 3 0.3 20 c ob c ib reverse voltage v (v) f=1mhz i e =0/ i c =0 t a =25 v cb / v eb c ob / c ib capacitance c (pf) 10 1000 100 30 v ce =6v t a =25 transition frequency f t (mhz) collector current i c (ma) typical characterisitics collector power dissipation p c (mw) ambient temperature t a ( ) p c t a 500 v be i c 30 3 0.3 t a =25 t a =100 common emitter v ce =1v collector current i c (ma) base-emmiter voltage v be (v) 30 3 =10 base-emitter saturation voltage v besat (v) collector current i c (ma) t a =25 t a =100 500 i c v besat static characteristic collector current i c (ma) collector-emitter voltage v ce (v) 400ua 350ua 300ua 250ua 200ua 150ua 100ua i b =50ua common emitter t a =25 2012- 0 wi llas electronic corp. 2012- 0 willas electronic corp. sot-23 plastic-encapsulate transistors 8050SLT1
outline drawing dimensions in inches and (millimeters) sot-23 rev.d .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20) 2012- 0 willas electronic corp. 2012- 0 willas electronic corp. sot-23 plastic-encapsulate transistors 8050SLT1
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